r07ds1194ej0300 rev.3.00 page 1 of 6 mar 26, 2014 preliminary datasheet 2sk1521-e1-e 450v - 50a - mos fet high speed power switching features ? low on-resistance r ds(on) = 0.08 typ. (at i d = 25 a, v gs = 10 v, ta = 25c) ? high speed switching ? low drive current ? built-in fast recovery diode (t rr = 120 ns) ? suitable for motor control, switching regulator, dc-dc converter outline 1. gate 2. drain 3. source 1 2 3 d g s renesas package code: prss0003zc-a (package name:to-264) absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 450 v gate to source voltage v gss 30 v drain current i d 50 a drain peak current i d(pulse) note1 200 a body to drain diode reverse drain current i dr 50 a channel dissipation pch note2 250 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at t c = 25 c r07ds1194ej0300 rev.3.00 mar 26, 2014
2sk1521-e1-e preliminary r07ds1194ej0300 rev.3.00 page 2 of 6 mar 26, 2014 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 450 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 25 v, v ds = 0 zero gate voltage drain current i dss ? ? 250 a v ds = 360 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) ? 0.08 0.10 i d = 25 a, v gs = 10 v note3 forward transfer admittance |y fs | 22 35 ? s i d = 25 a, v ds = 10 v note3 input capacitance ciss ? 8700 ? pf v ds = 10 v v gs = 0, f = 1 mhz output capacitance coss ? 2400 ? pf reverse transfer capacitance crss ? 235 ? pf turn-on delay time t d(on) ? 85 ? ns i d = 25 a v gs = 10 v, r l = 1.2 rise time t r ? 250 ? ns turn-off delay time t d(off) ? 600 ? ns fall time t f ? 250 ? ns body to drain diode forward voltage v df ? 1.1 ? v i f = 50 a, v gs = 0 body to drain diode reverse recovery time t rr ? 120 ? ns i f = 50 a, v gs = 0, di f /dt = 100 a/ s note: 3. pulse test
2sk1521-e1-e preliminary r07ds1194ej0300 rev.3.00 page 3 of 6 mar 26, 2014 main characteristics 1 drain current i d (a) static drain to source on state resistance r ds (on) ( ) static drain to source on state resistance vs. drain current (typical) 0.1 0.01 10 100 1000 v gs = 10 v ta = 25 c pulse test 1000 1000 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 1 100 10 1 0.1 10 100 100 820 drain to source voltage v ds (v) typical output characteristics 80 20 0 41216 0 40 60 drain current i d (a) v gs = 4 v 8 v 10 v 6 v 5.5 v 5 v 4.5 v 100 410 gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 80 20 0 268 0 40 60 v ds = 20 v pulse test ta = 75 c ?25 c 25 c tc = 25 c 1 shot operation in this area is limited by r ds(on) 10 s pw = 100 s ta = 25 c pulse test case temperature tc ( c) static drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. temperature (typical) ? 25 0 50 25 75 100 125 150 v gs = 10 v pulse test 0.5 0.4 0.1 0 0.2 0.3 i d = 50 a 10 a, 20 a 1 10 100 1000 100 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) di/dt = 100 a/ s v gs = 0, ta = 25 c
2sk1521-e1-e preliminary r07ds1194ej0300 rev.3.00 page 4 of 6 mar 26, 2014 10,000 20 50 drain to source voltage v ds (v) capacitance c (pf) 10 30 40 typical capacitance vs. drain to source voltage 0 1,000 100 10 v gs = 0 f = 1 mhz ta = 25 c crss coss ciss 500 160 400 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics (typical) 400 100 0 80 240 320 0 200 300 20 16 4 0 8 12 gate to source voltage v gs (v) v dd = 100 v 250 v 400 v v ds v gs v dd = 400 v 250 v 100 v i d = 50 a ta = 25 c 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) 100 80 40 60 20 0 v gs = 0 ta = 25 c pulse test
2sk1521-e1-e preliminary r07ds1194ej0300 rev.3.00 page 5 of 6 mar 26, 2014 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit waveform 3 1 0.01 0.1 100 10 1 m 10 m 100 m 1 10 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 0.5 c/w, tc = 25 c ?? d = 1 0.5 0.2 0.1 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 0.02 0.05 0.01 1 shot pulse tc = 25 c vin monitor d.u.t. vin 10 v 50 r l vout monitor v dd = 30 v
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